DocumentCode :
822641
Title :
Ku-band stop filter implemented on a high resistivity silicon with inverted microstrip line photonic bandgap (PBG) structure
Author :
Ha, Man-Lyun ; Kwon, Young-Se
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejon, South Korea
Volume :
15
Issue :
6
fYear :
2005
fDate :
6/1/2005 12:00:00 AM
Firstpage :
410
Lastpage :
412
Abstract :
We have developed the inverted microstrip line photonic bandgap (IML-PBG) structure using the surface micro-machining technology on the high resistivity silicon (HRS) substrate. Because, when the IML was fabricated, the holes for removing a sacrificial layer were necessary, we have introduced these holes into the PBG structure for the Ku-band stop filter (BSF). Rectangular spiral PBG structure showed the notch characteristics and the array with suitable distance showed the stop band with under -20 dB from 15 to 19 GHz and under -3 dB pass-band loss.
Keywords :
band-stop filters; micromachining; microstrip lines; microwave filters; photonic band gap; silicon; substrates; Ku-band stop filter; Si; high resistivity silicon; inverted microstrip line; photonic bandgap structure; rectangular spiral structure; surface micro-machining technology; Band pass filters; Conductivity; Coplanar waveguides; Frequency; Micromachining; Microstrip filters; Periodic structures; Photonic band gap; Silicon; Spirals; High resistivity silicon (HRS); inverted microstrip line (IML); photonic bandgap (PBG); surface micromachining;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2005.850483
Filename :
1435440
Link To Document :
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