Ku-band stop filter implemented on a high resistivity silicon with inverted microstrip line photonic bandgap (PBG) structure

Author

Ha, Man-Lyun ; Kwon, Young-Se

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejon, South Korea

Volume

15

Issue

6

fYear

2005

fDate

6/1/2005 12:00:00 AM

Firstpage

410

Lastpage

412

Abstract

We have developed the inverted microstrip line photonic bandgap (IML-PBG) structure using the surface micro-machining technology on the high resistivity silicon (HRS) substrate. Because, when the IML was fabricated, the holes for removing a sacrificial layer were necessary, we have introduced these holes into the PBG structure for the Ku-band stop filter (BSF). Rectangular spiral PBG structure showed the notch characteristics and the array with suitable distance showed the stop band with under -20 dB from 15 to 19 GHz and under -3 dB pass-band loss.

Keywords

band-stop filters; micromachining; microstrip lines; microwave filters; photonic band gap; silicon; substrates; Ku-band stop filter; Si; high resistivity silicon; inverted microstrip line; photonic bandgap structure; rectangular spiral structure; surface micro-machining technology; Band pass filters; Conductivity; Coplanar waveguides; Frequency; Micromachining; Microstrip filters; Periodic structures; Photonic band gap; Silicon; Spirals; High resistivity silicon (HRS); inverted microstrip line (IML); photonic bandgap (PBG); surface micromachining;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2005.850483

Filename

1435440