Hydrogen effect on 670-nm AlGaInP visible laser during high temperature operation

Author

Choi, Won-Jin ; Chang, Ji-Ho ; Choi, Won-Taek ; Kim, Seung-Hee ; Kim, Jong-Seok ; Leem, Shi-Jong ; Yoo, Tae-Kyung

Author_Institution

Goldstar Central Res Lab., Seoul, South Korea

Volume

1

Issue

2

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

717

Lastpage

722

Abstract

Characteristic changes of single-mode 670-nm strained multiquantum-well (S-MQW) AlGaInP visible lasers during accelerated aging test are investigated. After a short-term continuous operation of 3 mW at 50°C, the threshold current and slope efficiency are improved by 8.5% and 24%, respectively. In order to find out the origin of characteristic changes, photoluminescence and secondary ion mass spectrometry (SIMS) measurement were carried out. SIMS measurement revealed that atomic hydrogen, which had been formed as a zinc-hydrogen complex in the p-type InGaInP cladding layer, were dissociated and drifted into the active region of the laser structure during high temperature operation. These result in increase of the hole concentration of the p-AlGaInP layer, which enhances the heterobarrier height between the p-cladding layer and the active region In addition, the dissociated atomic hydrogen drifted into the active region by bias voltage passivates the defects in that region, which is proved by low temperature photoluminescence measurement showing that the defect-related peaks have disappeared

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; laser modes; mass spectroscopy; optical fabrication; photoluminescence; quantum well lasers; secondary ion mass spectra; strain ageing; vapour phase epitaxial growth; 3 mW; 50 C; 670 nm; AlGaInP; InGaInP; accelerated aging test; active region; bias voltage; cladding layer; defect-related peaks; heterobarrier height; high temperature operation; hole concentration; laser structure; photoluminescence; photoluminescence measurement; secondary ion mass spectrometry; short-term continuous operation; single-mode strained multiquantum-well laser; slope efficiency; threshold current; visible laser; Accelerated aging; Atomic beams; Atomic layer deposition; Atomic measurements; Hydrogen; Laser transitions; Photoluminescence; Temperature measurement; Testing; Threshold current;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.401262

Filename

401262