Title :
Extraction of substrate parameters for RF MOSFETs based on four-port measurement
Author :
Wu, Shih-Dao ; Huang, Guo-Wei ; Chen, Kun-Ming ; Chang, Chun-Yen ; Tseng, Hua-Chou ; Hsu, Tsun-Lai
Author_Institution :
Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
6/1/2005 12:00:00 AM
Abstract :
In this work, a new method for extracting substrate parameters of radio frequency (RF) metal oxide semiconductor field effect transistors (MOSFETs) based on four-port measurement is presented. A T-liked substrate resistance network is used and the values of all components in the cold MOSFETs were extracted directly from the four-port data between 250 MHz and 8.5 GHz. The output admittance Y22 can be well modeled up to 26.5 GHz based on the extracted substrate resistances and the other extrinsic capacitances extracted from an active device.
Keywords :
MOSFET; microwave field effect transistors; microwave measurement; multiport networks; semiconductor device measurement; semiconductor device models; 250 MHz to 8.5 GHz; RF MOSFET; T-liked substrate resistance network; cold MOSFET; extrinsic capacitances; four-port measurement; output admittance; radio frequency metal oxide semiconductor field effect transistors; substrate parameter extraction; Capacitance; Data mining; Electrical resistance measurement; Equivalent circuits; FETs; Frequency measurement; Immune system; MOSFETs; Radio frequency; Substrates; Four-port measurement; radio frequency (RF) metal oxide semiconductor field effect transistors (MOSFETs); substrate resistance;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2005.850566
