DocumentCode :
822771
Title :
Leakage and process variation effects in current testing on future CMOS circuits
Author :
Keshavarzi, Ali ; Tschanz, James W. ; Narendra, Siva ; De, Vivek ; Daasch, W. Robert ; Roy, Kaushik ; Sachdev, Manoj ; Hawkins, Charles F.
Author_Institution :
Microprocessor Res. Labs., Intel Corp., Portland, OR, USA
Volume :
19
Issue :
5
fYear :
2002
Firstpage :
36
Lastpage :
43
Abstract :
Barriers to technology scaling, such as leakage and parameter variations, challenge the effectiveness of current-based test techniques. This correlative multiparameter test approach improves current testing sensitivity, exploiting dependencies of transistor and circuit leakage on operating frequency, temperature, and body bias to discriminate fast but intrinsically leaky ICs from defective ones
Keywords :
CMOS integrated circuits; integrated circuit testing; leakage currents; CMOS circuits; current testing; leakage; leaky ICs; parameter variations; process variation effects; CMOS process; CMOS technology; Circuit testing; Frequency; Integrated circuit testing; Leakage current; Manufacturing; Microprocessors; Temperature dependence; Temperature sensors;
fLanguage :
English
Journal_Title :
Design & Test of Computers, IEEE
Publisher :
ieee
ISSN :
0740-7475
Type :
jour
DOI :
10.1109/MDT.2002.1033790
Filename :
1033790
Link To Document :
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