Low temperature grown poly-SiGe thin film by Au metal-induced lateral crystallisation (MILC) with fast MILC growth rate

Author

Chen, S.F. ; Fang, Y.K. ; Wang, W.D. ; Lin, C.Y. ; Lin, C.S.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

39

Issue

22

fYear

2003

Firstpage

1612

Lastpage

1614

Abstract

A report is presented of the growth of poly-SiGe thin films by gold (Au) metal-induced lateral crystallisation (MILC) technology under various conditions. The MILC growth rate induced by Au is high and can attain 15.1-22.8 μm/h under 500°C annealing. The rate is much faster than the conventional metal-induced solid-phase crystallisation with Ni. Additionally, the annealing temperature can be lowered to 450°C. The Au-MILC process possesses potential application for fabrication of low cost and high response poly-SiGe transistors on glass substrates.

Keywords

Ge-Si alloys; X-ray diffraction; gold; recrystallisation annealing; semiconductor growth; semiconductor materials; semiconductor thin films; thin film transistors; 450 C; 500 C; Au metal-induced lateral crystallisation; SiGe-Au; X-ray diffraction spectra; annealing temperature; fast MILC growth rate; glass substrate; low cost high response poly-SiGe transistors; low temperature grown poly-SiGe thin film;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20031035

Filename

1244136