Title :
Blue-green optically pumped GaN-based vertical cavity surface emitting laser
Author :
Cai, L.-E. ; Zhang, J.-Y. ; Zhang, B.P. ; Li, S.-Q. ; Wang, D.-X. ; Shang, J.-Z. ; Lin, F. ; Lin, K.-C. ; Yu, J.Z. ; Wang, Q.M.
Author_Institution :
Dept. of Phys. & Semicond. Photonics Res. Center, Xiamen Univ., Xiamen
Abstract :
Blue-green GaN-based vertical cavity surface emitting lasers (VCSELs) were fabricated with two dielectric Ta2O5/ SiO2 distributed Bragg reflectors. Lasing action was observed at a wavelength of 498.8 nm at room temperature under optical pumping. Threshold energy density and emission linewidth were 189 mJ/cm2 and 0.15 nm, respectively. The result demonstrates that blue-green VCSELs can be realised using III-nitride semiconductors.
Keywords :
distributed Bragg reflector lasers; gallium compounds; laser cavity resonators; optical pumping; surface emitting lasers; GaN; III-nitride semiconductors; blue-green optically pumps; distributed Bragg reflectors; emission linewidth; lasing action; threshold energy density; vertical cavity surface emitting laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20081747
