Title :
Radiation Effects on Low Power Schottky Digital Integrated Circuits
Author_Institution :
GTE Sylvania 77 "A" Street Needham Heights, Ma. 02194
Abstract :
Typical low power Schottky integrated circuits were exposed to two standard radiation environments to obtain characteristic radiation response in comparison to standard TTL. The neytron levels were 1.9Ã1012 and 2.1Ã1013 neutron/cm2 (Californium-252 spectrum). The gamma dose rates were 7Ã109 to 3.8Ã1010 rads(Si/sec (100 nanosecond pulse width). Neutron response was minimal - Ã degraded less than 10%, other parameters shifted less than 5%. Photocurrents were roughly 50 to 100% higher than the standard TTL. Results indicate that LS series IC´s were at least as neutron hard as typical standard TTL devices but may fail at a factor of 2 to 10 times lower gamma dose rate.
Keywords :
Digital integrated circuits; Gold; Logic devices; Military standards; Neutrons; Photoconductivity; Power dissipation; Radiation effects; Space vector pulse width modulation; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1976.4328355