DocumentCode :
823079
Title :
Radiation Effects on Low Power Schottky Digital Integrated Circuits
Author :
Cooper, M.S.
Author_Institution :
GTE Sylvania 77 "A" Street Needham Heights, Ma. 02194
Volume :
23
Issue :
1
fYear :
1976
Firstpage :
853
Lastpage :
859
Abstract :
Typical low power Schottky integrated circuits were exposed to two standard radiation environments to obtain characteristic radiation response in comparison to standard TTL. The neytron levels were 1.9×1012 and 2.1×1013 neutron/cm2 (Californium-252 spectrum). The gamma dose rates were 7×109 to 3.8×1010 rads(Si/sec (100 nanosecond pulse width). Neutron response was minimal - ß degraded less than 10%, other parameters shifted less than 5%. Photocurrents were roughly 50 to 100% higher than the standard TTL. Results indicate that LS series IC´s were at least as neutron hard as typical standard TTL devices but may fail at a factor of 2 to 10 times lower gamma dose rate.
Keywords :
Digital integrated circuits; Gold; Logic devices; Military standards; Neutrons; Photoconductivity; Power dissipation; Radiation effects; Space vector pulse width modulation; Testing;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1976.4328355
Filename :
4328355
Link To Document :
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