• DocumentCode
    823158
  • Title

    High-reliability MOCVD-grown quantum dot laser

  • Author

    Sellin, R.L. ; Ribbat, C. ; Bimberg, D. ; Rinner, F. ; Konstanzer, H. ; Kelemen, M.T. ; Mikulla, M.

  • Author_Institution
    Inst. fur Festkorperphys., Technische Univ. Berlin, Germany
  • Volume
    38
  • Issue
    16
  • fYear
    2002
  • fDate
    8/1/2002 12:00:00 AM
  • Firstpage
    883
  • Lastpage
    884
  • Abstract
    4.7 W continuous-wave (CW) and 11.7 W quasi-CW output power have been demonstrated for laser diodes based on six-fold stacks of InGaAs/GaAs quantum dots. Lifetimes beyond 3000 h at 1.0 and 1.5 W output power and 50°C heatsink temperature were measured. The output power is limited by catastrophic optical mirror damage occurring at 19.5 MW/cm2 on the front facet
  • Keywords
    III-V semiconductors; MOCVD; gallium arsenide; indium compounds; quantum well lasers; semiconductor device reliability; semiconductor quantum dots; vapour phase epitaxial growth; 1 to 11.7 W; 3000 h; 4.7 W; 50 C; CW output power; InGaAs-GaAs; InGaAs/GaAs quantum dots; MOCVD-grown semiconductor laser; continuous-wave output power; front facet; high-reliability laser; optical mirror damage; output power limitation; quantum dot laser; quasi-CW output power; six-fold stacks;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020602
  • Filename
    1033826
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=823158