DocumentCode
823176
Title
Influence of annealed ohmic contact metals on polarisation of AlGaN barrier layer
Author
Lin, Zhaojun ; Lu, Wu ; Lee, Jaesun ; Liu, Dongmin ; Flynn, J.S. ; Brandes, G.R.
Author_Institution
Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA
Volume
39
Issue
19
fYear
2003
Firstpage
1412
Lastpage
1414
Abstract
The influence of annealed ohmic contact metals on the polarisation of the AlGaN barrier layer has been investigated by the Schottky contacts on the AlGaN/GaN HFET structure. The analysed result shows that annealed ohmic contact metals weaken the polarisation of the AlGaN barrier layer. When ohmic contact metals are close to Schottky contact metals, the weakened polarisation decreases the 2DEG sheet carrier concentration in the channel.
Keywords
III-V semiconductors; Schottky barriers; aluminium compounds; carrier density; gallium compounds; microwave field effect transistors; microwave power transistors; ohmic contacts; polarisation; power field effect transistors; semiconductor device metallisation; semiconductor-metal boundaries; two-dimensional electron gas; wide band gap semiconductors; 2DEG sheet carrier concentration; AlGaN barrier layer polarisation; AlGaN-GaN; AlGaN/GaN HFET structure; Schottky contacts; annealed ohmic contact metals;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20030890
Filename
1244175
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