Gate current dependent hot-carrier-induced degradation in LDMOS transistors

Hot-carrier-induced degradation in an n-type lateral diffused metal-oxide-semiconductor (LDMOS) transistor is investigated. Based on experimental data and technology computer-aided-design simulations, hot-electron injection in the channel region is identified to be the driving force of device degradation. Since gate current (I_g) consists mainly of electron injection, I_g is found to correlate with device degradation well. Such I_g dependent device degradation suggests that I_g should be examined in evaluating the hot-carrier reliability of LDMOS transistors.