• DocumentCode
    823186
  • Title

    Reduced cell pitch and on-resistance of trench MOSFET by employing source on trench sidewall

  • Author

    Park, Il-Yong ; Kim, Sang-Gi ; Koo, Jin-Gun ; Kim, Jongdae

  • Author_Institution
    Basic Res. Lab., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
  • Volume
    39
  • Issue
    19
  • fYear
    2003
  • Firstpage
    1414
  • Lastpage
    1415
  • Abstract
    Novel structures for fabricating highly dense trench MOSFETs are proposed. The source region is formed on the trench sidewall by using self-aligned process techniques including three-step trench etching. The simulated breakdown voltage and the on-resistance for a cell pitch of 1.0 μm are 45 V and 12.9 mΩ·mm2, respectively.
  • Keywords
    etching; power MOSFET; semiconductor device breakdown; 1.0 micron; 45 V; breakdown voltage; cell pitch reduction; highly dense trench MOSFETs; on-resistance reduction; self-aligned process techniques; source on trench sidewall; three-step trench etching;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030885
  • Filename
    1244176
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=823186