Title :
Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz
Author :
Coffie, R. ; Shen, L. ; Parish, G. ; Chini, A. ; Buttari, D. ; Heikman, S. ; Keller, S. ; Mishra, U.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
Abstract :
A novel gate process utilising SiO2 to cover the recess sidewall on the drain side of a p-GaN/AlGaN/GaN high electron mobility transistor is presented. Improvements in breakdown voltage and output power are demonstrated with no degradation in small-signal performance.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device breakdown; wide band gap semiconductors; 10 GHz; GaN-AlGaN-GaN; SiO2; breakdown voltage; high electron mobility transistor; output power; recess sidewall; small-signal performance; two-step gate deposition process; unpassivated p-GaN/AlGaN/GaN HEMTs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030872
