• DocumentCode
    823215
  • Title

    Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz

  • Author

    Coffie, R. ; Shen, L. ; Parish, G. ; Chini, A. ; Buttari, D. ; Heikman, S. ; Keller, S. ; Mishra, U.K.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
  • Volume
    39
  • Issue
    19
  • fYear
    2003
  • Firstpage
    1419
  • Lastpage
    1420
  • Abstract
    A novel gate process utilising SiO2 to cover the recess sidewall on the drain side of a p-GaN/AlGaN/GaN high electron mobility transistor is presented. Improvements in breakdown voltage and output power are demonstrated with no degradation in small-signal performance.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device breakdown; wide band gap semiconductors; 10 GHz; GaN-AlGaN-GaN; SiO2; breakdown voltage; high electron mobility transistor; output power; recess sidewall; small-signal performance; two-step gate deposition process; unpassivated p-GaN/AlGaN/GaN HEMTs;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030872
  • Filename
    1244179
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=823215