Title :
Singlemode fibre transmission using 1.2 μm band GaInAs/GaAs surface emitting laser
Author :
Kondo, T. ; Arai, M. ; Azuchi, M. ; Uchida, T. ; Matsutani, A. ; Miyamoto, T. ; Koyama, F.
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
fDate :
8/1/2002 12:00:00 AM
Abstract :
Singlemode fibre (SMF) transmission using a 1.2 μm band GaInAs/GaAs vertical cavity surface emitting laser (VCSEL) is demonstrated. It was observed that the short optical pulse with a pulse width of 60 ps was compressed to 50 ps after transmitting in a 10 km-long SMF due to the frequency chirp of a VCSEL and the negative fibre dispersion at 1.2 μm. This result indicates that this new wavelength window would enable high bit rate data transmission beyond 10 Gbit/s without chirp penalties
Keywords :
III-V semiconductors; chirp modulation; distributed Bragg reflector lasers; gallium arsenide; indium compounds; optical fibre LAN; optical pulse compression; optical transmitters; quantum well lasers; surface emitting lasers; 1.2 micron; 10 Gbit/s; GaInAs-GaAs; direct-modulated VCSEL; distributed Bragg reflector; frequency chirp; high bit rate data transmission; highly strained quantum well; linewidth enhancement factor; negative fibre dispersion; optical pulse compression; short optical pulse; single-mode fibre transmission; ultimate transmission bandwidth; vertical cavity surface emitting laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020598
