DocumentCode
823459
Title
State-of-art CW power density achieved at 26 GHz by AlGaN/GaN HEMTs
Author
Lee, C. ; Wang, H. ; Yang, J. ; Witkowski, L. ; Muir, M. ; Khan, M.A. ; Saunier, P.
Author_Institution
TriQuint Semicond. Texas, Richardson, TX, USA
Volume
38
Issue
16
fYear
2002
fDate
8/1/2002 12:00:00 AM
Firstpage
924
Lastpage
925
Abstract
The DC and microwave power performance of metal organic chemical vapour deposition-grown AlGaN/GaN HEMTs on SiC substrate is reported. The devices exhibited high maximum current density of 1.1 A/mm with high peak extrinsic transconductance of 234 mS/mm. At 26 GHz, the devices achieved continuous-wave (CW) power density of 5 W/mm with power-added-efficiency of 30.1%, which represents the highest output power density and associated power-added efficiency reported above 20 GHz
Keywords
aluminium compounds; current density; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; silicon compounds; wide band gap semiconductors; 234 mS/mm; 26 GHz; 30.1 percent; AlGaN-GaN-SiC; AlGaN/GaN; CW power density; HEMTs; SiC; maximum current density; microwave power performance; output power density; peak extrinsic transconductance; power-added-efficiency;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20020603
Filename
1033853
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