Title :
Comparison of I-V, CV, and chemical data for quality control studies of SiO/sub x/N/sub y/ films on Si
Author :
O´Clock, G.D., Jr. ; Huck, M.W. ; Peters, M.S. ; Turner, M.J. ; Carlson, B.A. ; Katz, W.
Author_Institution :
Sch. of Phys. Eng. & Technol., Mankato State Univ., Mankato, MN, USA
Abstract :
Capacitance-voltage (CV) and current-voltage (I-V) measurements for SiO/sub x/N/sub y/ films are compared with chemical data in order to provide some diagnostic capabilities in relating aberrant electrical characteristics with contaminants incorporated in the insulator film structure. In-process monitoring of film quality (utilizing electrical characteristics and chemical data) is especially critical in very large-scale integration (VLSI) processing control where the films are utilized both as an integral part of specific semiconductor device processing steps or as part of the semiconductor device structure.<>
Keywords :
VLSI; insulating thin films; integrated circuit technology; quality control; semiconductor technology; silicon compounds; C-V data; I-V data; IC fabrication; SiO/sub x/N/sub y/-Si; VLSI; capacitance-voltage measurements; chemical data; contaminants; current-voltage measurements; electrical characteristics; film quality; in process monitoring; insulator film; processing control; quality control studies; semiconductor device processing; very large-scale integration; Capacitance measurement; Capacitance-voltage characteristics; Chemicals; Current measurement; Dielectrics and electrical insulation; Electric variables; Electric variables measurement; Pollution measurement; Semiconductor devices; Semiconductor films;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
