Title :
Steady State Gamma Testing of a 4K NMOS Dynamic Ram
Author :
Coleman, D.W. ; Temkin, B.M.
Author_Institution :
General Dynamics Electronics Division Post Office Box 2566 Orlando, Florida 32802
fDate :
6/1/1976 12:00:00 AM
Keywords :
DRAM chips; Electronic equipment testing; Instruments; Ionizing radiation; MOS devices; Random access memory; Read-write memory; Satellites; Sequential analysis; Steady-state;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1976.4328456
