Title :
MIS slow-wave structures over a wide range of parameters
Author :
Gilb, James P K ; Balanis, Constantine A.
Author_Institution :
Dept. of Electr. Eng., Telecommun. Res. Center, Arizona State Univ., Tempe, AZ, USA
fDate :
12/1/1992 12:00:00 AM
Abstract :
Lossy multilayer, multiconductor MIS microstrip structures are analyzed with the spectral-domain approach over a wide range of frequency and substrate loss. The modal attenuation and propagation constants are presented for two- and four-conductor structures as a function of the substrate loss tangent. Single-conductor structures are characterized with contour plots showing the complex effective dielectric constant as a function of both frequency and conductivity. MIS slow-wave structures are analyzed for both Si-SiO2 and GaAs configurations
Keywords :
MMIC; dielectric losses; metal-insulator-semiconductor structures; microstrip components; permittivity; spectral-domain analysis; waveguide theory; GaAs; MIS slow-wave structures; MMIC; Si-SiO2; complex effective dielectric constant; conductivity; contour plots; four-conductor structures; frequency; lossy multilayer structures; microstrip structures; modal attenuation; multiconductor; propagation constants; single-conductor structure; spectral-domain approach; substrate loss tangent; two-conductor structure; Attenuation; Conductivity; Dielectric constant; Dielectric substrates; Frequency; Gallium arsenide; Microstrip; Nonhomogeneous media; Propagation constant; Propagation losses;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
