Title :
Threshold Voltage Model for Short-Channel Undoped Symmetrical Double-Gate MOSFETs
Author :
Tsormpatzoglou, Andreas ; Dimitriadis, Charalabos A. ; Clerc, Raphaël ; Pananakakis, G. ; Ghibaudo, Gérard
Author_Institution :
Dept. of Phys., Aristotle Univ. of Thessaloniki, Thessaloniki
Abstract :
A simple threshold voltage model of an undoped symmetrical double-gate MOSFET has been developed, based on an analytical solution of Poisson´s equation for the potential distribution. The model has been verified by comparing the threshold voltage roll-off with the channel length with simulation results for different silicon thicknesses, gate oxide thicknesses, and drain voltage values. Good agreement between model and simulation results is obtained by calibrating the minimum carrier charge sheet density adequate to achieve the turn-on condition.
Keywords :
MOSFET; Poisson equation; elemental semiconductors; silicon; Poisson´s equation; Si; carrier charge sheet density; drain voltage; gate oxide thicknesses; short-channel undoped symmetrical double-gate MOSFETs; silicon thicknesses; threshold voltage model; Degradation; Dielectric constant; Helium; MOSFETs; Microscopy; Nanoscale devices; Poisson equations; Semiconductor device modeling; Silicon; Threshold voltage; Double-gate (DG) MOSFET; threshold voltage modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.927394
