Title :
Optimal Design of Triple-Gate Devices for High-Performance and Low-Power Applications
Author :
Chiang, Meng-Hsueh ; Lin, Jeng-Nan ; Kim, Keunwoo ; Chuang, Ching-Te
Author_Institution :
Dept. of Electron. Eng., Nat. Ilan Univ., I-Lan
Abstract :
Pragmatic design of triple-gate (TG) devices is presented by considering corner effects, short-channel effects, and channel-doping profiles. A novel TG MOSFET structure with a polysilicon gate process is proposed using asymmetrical polysilicon gates. CMOS-compatible ´s for high-performance circuit applications can be achieved for both nFET and pFET. The superior subthreshold characteristics and device performance are analyzed and validated by 3-D numerical simulations. Comparisons of device characteristics with a midgap metal gate are presented.
Keywords :
CMOS integrated circuits; MOSFET; doping profiles; CMOS-compatible; TG MOSFET structure; channel-doping profiles; corner effects; short-channel effects; subthreshold characteristics; triple-gate MOSFET; CMOS technology; Doping; FETs; FinFETs; Helium; MOSFET circuits; Numerical simulation; Performance analysis; Semiconductor films; Silicon; Corner effects; polysilicon gate; triple-gate (TG) MOSFETs;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.927664
