Title :
Impact of Ballistic and Quasi-Ballistic Transport on Performances of Double-Gate MOSFET-Based Circuits
Author :
Martinie, Sébastien ; Le Carval, Gilles ; Munteanu, Daniela ; Soliveres, S. ; Autran, Jean-Luc
Author_Institution :
CEA-LETI, MINATEC, Grenoble
Abstract :
A drift-diffusion-like formulation for including ballistic and quasi-ballistic transport in the simulation of double-gate MOSFETs has been implemented in a technology computer-aided design (TCAD) simulator. This model is based on a description of the quasi-ballistic mobility through a dynamical description of the mean free path. The model has been validated by comparison with experimental data and Monte Carlo simulation. In addition, several circuit elements (CMOS inverter, powerless XOR gate, and ring oscillator) have been simulated in the TCAD environment, illustrating the impact of ballistic and quasi-ballistic transport on static and transient performances at the circuit level.
Keywords :
MOSFET circuits; Monte Carlo methods; ballistic transport; circuit CAD; technology CAD (electronics); Monte Carlo simulation; circuit level; double gate MOSFET circuits; drift diffusion like formulation; dynamical description; mean free path; quasi ballistic transport; technology computer aided design simulator; Ballistic transport; CMOS technology; Circuit simulation; Computational modeling; Computer simulation; Equations; Laboratories; MOSFETs; Microelectronics; Semiconductor device modeling; Ballistic transport; CMOS inverter; double-gate MOSFETs (DGMOS); quasi-ballistic transport; ring oscillator; technology computer-aided design (TCAD);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.927656
