Pseudomorphic inverted HEMT suitable to low supplied voltage application

Author

Kasashima, Masaaki ; Arai, Yukari ; Fujishiro, Hiroki Inomata ; Nakamura, Hajime ; Nishi, Seiji

Author_Institution

Oki Electr. Ind. Co. Ltd., Tokyo, Japan

Volume

40

Issue

12

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

2381

Lastpage

2386

Abstract

An enhancement-mode pseudomorphic inverted HEMT with short gate length shows superior saturation properties at low drain voltage. Such saturation properties are suitable for low-supplied-voltage applications. High-frequency properties of FETs were also studied, using two types of frequency-dependent measurement systems which represent active load and common-source circuits. It was confirmed that low knee voltage in the static I-V curve is preserved above 100 kHz. The estimated output power for the device is 50% higher than that of conventional pseudomorphic HEMT at supplied voltage of 1 V

Keywords

high electron mobility transistors; semiconductor device testing; solid-state microwave devices; 1 V; LV supply application; active load; common-source circuits; enhancement-mode; frequency-dependent measurement systems; pseudomorphic inverted HEMT; saturation properties; short gate length; static I-V curve; Circuits; FETs; Frequency measurement; Gallium arsenide; HEMTs; Knee; Low voltage; MESFETs; Microwave devices; Radio frequency;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.179905

Filename

179905