A high power on-wafer pulsed active load pull system

Author

Poulin, Dennis D. ; Mahon, John R. ; Lanteri, Jean-Pierre

Author_Institution

Hewlett-Packard Co., Burlington, MA, USA

Volume

40

Issue

12

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

2412

Lastpage

2417

Abstract

A unique on-wafer system that is capable of measuring load-pull contours on true high-power and large-periphery devices is described. Measurements are made under low duty cycle pulsed DC and RF conditions to minimize the effects of heating due to power dissipation in the on-wafer environment. With the current implementation of the load pull system, any load impedance on the Smith chart can be presented to the output of four watt devices. The system is fully error corrected for reflection coefficient, transmission coefficient, input power incident, input power delivered, and output power delivered. The system is capable of automatic control and measurement by means of a HP 9000 series workstation. Data for C-band MMIC power amplifiers and 2-mm GaAs FETs are presented

Keywords

MMIC; automatic test equipment; error correction; integrated circuit testing; microwave measurement; semiconductor device testing; C-band; FETs; GaAs; HP 9000 series workstation; MMIC power amplifiers; automatic control; high power; input power; large-periphery devices; low duty cycle; on-wafer system; output power; pulsed DC; pulsed RF conditions; pulsed active load pull system; reflection coefficient; transmission coefficient; Error correction; Heating; Impedance; Power amplifiers; Power dissipation; Power generation; Power measurement; Pulse measurements; Radio frequency; Reflection;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.179910

Filename

179910