• DocumentCode
    824549
  • Title

    High-speed active-input cascode current mirror

  • Author

    Bauwelinck, J. ; Ossieur, P. ; Qiu, X.Z. ; Vandewege, J.

  • Author_Institution
    Dept. of Inf. Technol., Ghent Univ., Gent, Belgium
  • Volume
    42
  • Issue
    3
  • fYear
    2006
  • Firstpage
    128
  • Lastpage
    130
  • Abstract
    A high-speed active-input cascode current mirror is presented. The proposed configuration combines a high output impedance with the high-frequency performance of a source- or emitter-driven active-input topology. Simulation results in a 0.35 μm SiGe BiCMOS are presented to demonstrate the validation of the proposed current mirror. A much higher (about 30 to 40 times) output impedance is achieved, with no degradation in the high-frequency behaviour compared to conventional emitter-driven active-input current mirrors, without increasing the power consumption. The proposed configuration can be applied to both bipolar and CMOS technology.
  • Keywords
    BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; current mirrors; 0.35 micron; BiCMOS; CMOS technology; SiGe; active-input cascode current mirror; bipolar technology; emitter-driven active-input topology; high output impedance; high-frequency performance; power consumption; source-driven active-input topology;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20064100
  • Filename
    1593282