Title :
High-speed active-input cascode current mirror
Author :
Bauwelinck, J. ; Ossieur, P. ; Qiu, X.Z. ; Vandewege, J.
Author_Institution :
Dept. of Inf. Technol., Ghent Univ., Gent, Belgium
Abstract :
A high-speed active-input cascode current mirror is presented. The proposed configuration combines a high output impedance with the high-frequency performance of a source- or emitter-driven active-input topology. Simulation results in a 0.35 μm SiGe BiCMOS are presented to demonstrate the validation of the proposed current mirror. A much higher (about 30 to 40 times) output impedance is achieved, with no degradation in the high-frequency behaviour compared to conventional emitter-driven active-input current mirrors, without increasing the power consumption. The proposed configuration can be applied to both bipolar and CMOS technology.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; current mirrors; 0.35 micron; BiCMOS; CMOS technology; SiGe; active-input cascode current mirror; bipolar technology; emitter-driven active-input topology; high output impedance; high-frequency performance; power consumption; source-driven active-input topology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20064100