DocumentCode :
824694
Title :
Charge Yield and Dose Effects in MOS Capacitors at 80 K
Author :
Boesch, H.E., Jr. ; McGarrity, J.M.
Author_Institution :
Harry Diamond Laboratories Adelphi, Maryland 20783
Volume :
23
Issue :
6
fYear :
1976
Firstpage :
1520
Lastpage :
1525
Keywords :
Capacitance-voltage characteristics; Charge measurement; Current measurement; DNA; Electric variables measurement; Ionizing radiation; Linear particle accelerator; MOS capacitors; Pulse measurements; Temperature;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1976.4328532
Filename :
4328532
Link To Document :
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