• DocumentCode
    824717
  • Title

    Low-voltage charge pump

  • Author

    Zhang, M. ; Llaser, N.

  • Author_Institution
    IEF AXIS, Univ. of Paris-sud, Orsay, France
  • Volume
    42
  • Issue
    3
  • fYear
    2006
  • Firstpage
    154
  • Lastpage
    156
  • Abstract
    A low-voltage charge pump, having a symmetrical structure, is proposed. In this charge pump, enhanced switches are used instead of diode-configured MOSTs. The switch-controlling voltage is mutually offered by the two symmetrical branches, which makes the enhanced switches turn on/off alternatively during the designated cycles. Consequently, the voltage drop due to the threshold voltage of MOSTs is eliminated, exhibiting gain in die area, rise time and maximum output voltage.
  • Keywords
    MOSFET; charge-coupled devices; low-power electronics; power supplies to apparatus; switches; charge transfer switches; diode-configured MOST; low-voltage charge pump; switch-controlling voltage; symmetrical structure; voltage drop;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20063411
  • Filename
    1593299
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=824717