Title :
Viscous Shear Flow Model for MOS Device Radiation Sensitivity
Author :
EerNisse, E.P. ; Derbenwick, G.F.
Author_Institution :
Sandia Laboratories, Albuquerque, New Mexico 87115
Keywords :
Annealing; Electron traps; Ionizing radiation; MOS devices; Occupational stress; Oxidation; Process design; Temperature sensors; Thermal stresses; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1976.4328534
