DocumentCode :
824724
Title :
Electrical feedback and its network analysis for linewidth reduction of a semiconductor laser
Author :
Ohtsu, M. ; Tabuchi, Noboru
Author_Institution :
Tokyo Inst. of Technol., Yokohama, Japan
Volume :
6
Issue :
3
fYear :
1988
fDate :
3/1/1988 12:00:00 AM
Firstpage :
357
Lastpage :
369
Abstract :
The center frequency of the field spectrum of a 1.5-μm InGaAsP distributed-feedback laser was stabilized by negative electrical feedback. The resultant residual frequency fluctuation was σ=3.6×10-11 for an integration time of 10 s. The linewidth of the field spectrum was simultaneously reduced by using another electrical feedback loop. Its minimum value was 360 kHz, which was 1/27 that of the free-running condition. This linewidth was narrower than the one determined by the magnitude of the spontaneous emission of the free-running laser. The field spectrum was very stable, and the value of the linewidth was constant for more than 40 h. Network analysis was carried out to realize further reductions of the linewidth
Keywords :
III-V semiconductors; distributed feedback lasers; feedback; gallium arsenide; gallium compounds; indium compounds; network analysis; semiconductor junction lasers; spectral line breadth; 1.5 micron; 10 s; 360 Hz; InGaAsP; InGaAsP distributed-feedback laser; field spectrum; free-running laser; frequency fluctuation; integration time; linewidth reduction; negative electrical feedback; network analysis; semiconductor laser; spontaneous emission; Atom optics; Fiber lasers; Frequency; Laser feedback; Laser noise; Laser stability; Low-frequency noise; Optical feedback; Semiconductor device noise; Semiconductor lasers;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/50.4013
Filename :
4013
Link To Document :
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