• DocumentCode
    824732
  • Title

    Room-temperature continuous-wave 1.55 μm GaInNAsSb laser on GaAs

  • Author

    Bank, S.R. ; Bae, H.P. ; Yuen, H.B. ; Wistey, M.A. ; Goddard, L.L. ; Harris, J.S., Jr.

  • Author_Institution
    Solid State & Photonics Lab, Stanford Univ., CA, USA
  • Volume
    42
  • Issue
    3
  • fYear
    2006
  • Firstpage
    156
  • Lastpage
    157
  • Abstract
    The first low-threshold 1.55 μm lasers grown on GaAs are reported. Lasing at 1.55 μm was observed from a 20×2400 μm as-cleaved device with a room-temperature continuous-wave threshold current density of 579 A/cm2, external efficiency of 41%, and 130 mW peak output power. The pulsed threshold current density was 550 A/cm2 with >600 mW peak output power.
  • Keywords
    III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; wide band gap semiconductors; 1.55 micron; 130 mW; 20 micron; 200 micron; GaInNAsSb-GaAs; peak output power; room-temperature continuous-wave laser; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20064022
  • Filename
    1593300
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=824732