Title :
Ion Implantation of Pb0.8Sn0.2Te
Author :
Bis, R.F. ; Houston, Bland
Author_Institution :
Naval Surface Weapons Center, White Oak Silver Spring, Maryland 20910
Abstract :
The ion implantations of many ions into single crystal epitaxial films of Pb0.8Sn0.2Te have been evaluated. Because of the wide spectrum of results, only those of the two most promising ions, S+ and In+, are presented. The S+ ions produced a p-type layer in Pb0.8Sn0.2Te. After a suitable post implant anneal In+ ions produced an n-type layer in p-type Pb0.8 Sn0.2Te. The In+ implants were used to produce detector arrays, while the S+ implants produced complete conversion of 4500 Ã… films.
Keywords :
Annealing; Hall effect; Implants; Ion implantation; Lattices; Lead; Optical films; Tellurium; Temperature; Zinc;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1976.4328536
