• DocumentCode
    824741
  • Title

    Ion Implantation of Pb0.8Sn0.2Te

  • Author

    Bis, R.F. ; Houston, Bland

  • Author_Institution
    Naval Surface Weapons Center, White Oak Silver Spring, Maryland 20910
  • Volume
    23
  • Issue
    6
  • fYear
    1976
  • Firstpage
    1546
  • Lastpage
    1548
  • Abstract
    The ion implantations of many ions into single crystal epitaxial films of Pb0.8Sn0.2Te have been evaluated. Because of the wide spectrum of results, only those of the two most promising ions, S+ and In+, are presented. The S+ ions produced a p-type layer in Pb0.8Sn0.2Te. After a suitable post implant anneal In+ ions produced an n-type layer in p-type Pb0.8 Sn0.2Te. The In+ implants were used to produce detector arrays, while the S+ implants produced complete conversion of 4500 Ã… films.
  • Keywords
    Annealing; Hall effect; Implants; Ion implantation; Lattices; Lead; Optical films; Tellurium; Temperature; Zinc;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1976.4328536
  • Filename
    4328536
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=824741