Title :
Dependence of Interface-State Buildup on Hole Generation and Transport in Irradiated MOS Capacitors
Author :
Winokur, P.S. ; McGarrity, J.M. ; Boesch, H.E., Jr.
Author_Institution :
Harry Diamond Laboratories Adelphi, Maryland 20783
Keywords :
Capacitance-voltage characteristics; Charge carrier processes; Density measurement; Electrodes; Electron traps; Fluctuations; Interface states; Ionizing radiation; MOS capacitors; NIST;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1976.4328543
