Title :
Effects of Defects and Impurities in Starting Material on Radiation Hardness of CMOS/SOS Devices
Author :
Peel, J.L. ; Barry, M.D. ; Green, L.G.
Author_Institution :
Rockwell International Corporation Anaheim, California 92803
Abstract :
Some of the relationships between defects and impurities in SOS starting materials and the radiation hardness of CMOS/SOS devices have been investigated. It is shown that a direct correlation exists between contaminants in the epitaxial silicon film and the radiation-induced back-channel leakage currents. Radiation-induced shifts in device threshold voltage were observed, but these shifts appeared to be more closely related to variations in device processing than to silicon film contamination.
Keywords :
Etching; Impurities; Leakage current; Semiconductor films; Silicon; Substrates; Surface charging; Surface contamination; Surface topography; X-ray diffraction;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1976.4328546
