DocumentCode :
824837
Title :
Effects of Defects and Impurities in Starting Material on Radiation Hardness of CMOS/SOS Devices
Author :
Peel, J.L. ; Barry, M.D. ; Green, L.G.
Author_Institution :
Rockwell International Corporation Anaheim, California 92803
Volume :
23
Issue :
6
fYear :
1976
Firstpage :
1594
Lastpage :
1598
Abstract :
Some of the relationships between defects and impurities in SOS starting materials and the radiation hardness of CMOS/SOS devices have been investigated. It is shown that a direct correlation exists between contaminants in the epitaxial silicon film and the radiation-induced back-channel leakage currents. Radiation-induced shifts in device threshold voltage were observed, but these shifts appeared to be more closely related to variations in device processing than to silicon film contamination.
Keywords :
Etching; Impurities; Leakage current; Semiconductor films; Silicon; Substrates; Surface charging; Surface contamination; Surface topography; X-ray diffraction;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1976.4328546
Filename :
4328546
Link To Document :
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