• DocumentCode
    824891
  • Title

    2.4 μm cutoff wavelength avalanche photodiode on InP substrate

  • Author

    Sidhu, R. ; Zhang, L. ; Tan, N. ; Duan, N. ; Campbell, J.C. ; Holmes, A.L., Jr. ; Hsu, C.-F. ; Itzler, M.A.

  • Author_Institution
    Electr. & Comput. Eng. Dept., Univ. of Texas, Austin, TX, USA
  • Volume
    42
  • Issue
    3
  • fYear
    2006
  • Firstpage
    181
  • Lastpage
    182
  • Abstract
    An InP-based avalanche photodiode with a cutoff wavelength of 2.4 μm is reported. Type-II GaInAs-GaAsSb quantum wells lattice-matched to InP were used in the absorption region of the photodiode for long-wavelength absorption. The device exhibited multiplication gain in excess of 30 at room temperature and in excess of 200 at 225 Kelvin with dark current density near breakdown of less than 0.66 mA/cm2.
  • Keywords
    III-V semiconductors; avalanche photodiodes; current density; gallium arsenide; gallium compounds; indium compounds; photoconductivity; semiconductor device breakdown; semiconductor quantum wells; 2.4 micron; GaInAs-GaAsSb; GaInAs-GaAsSb quantum wells; avalanche photodiode; cutoff wavelength; dark current density; long-wavelength absorption; multiplication gain; semiconductor device breakdown;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20063415
  • Filename
    1593316
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=824891