Mixed particle Monte Carlo method for deep submicron semiconductor device simulator

Author

Jin, Gyo-Young ; Park, Young-June ; Min, Hong-Shick

Author_Institution

Dept. of Electron. Eng., Seoul Nat. Univ., South Korea

Volume

10

Issue

12

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

1534

Lastpage

1541

Abstract

A particle simulation method is introduced in which two kinds of particle models are used in one device. A conventional Monte Carlo particle model is used in the region where nonstatic effects are evident, and a particle model based on Langevin´s equation is used in the region where the drift-diffusion approximation is valid. In this way it is possible to obtain efficiency and the required physical accuracy in device simulation. For the validity of this scheme, a silicon n⁺-n-n⁺ structure is simulated, and some important results are presented

Keywords

Monte Carlo methods; digital simulation; electronic engineering computing; semiconductor device models; Langevin´s equation; Monte Carlo method; Si; deep submicron; drift-diffusion approximation; mixed particle method; n⁺-n-n⁺ structure; nonstatic effects; particle simulation method; semiconductor device simulator; Bipolar transistors; Electrons; MOSFET circuits; Monte Carlo methods; Poisson equations; Semiconductor devices; Silicon; Ultrafast electronics;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.103503

Filename

103503