Title :
Application of Damage Constants in Gamma Irradiated Anphoterically Si Doped GaAs LEDs
Author :
Barnes, C.E. ; Soda, K.J.
Author_Institution :
Sandia Laboratories, Albuquerque, New Mexico 87115
Keywords :
Degradation; Doping; Electrons; Gallium arsenide; Laboratories; Light emitting diodes; Low voltage; Neutrons; Space charge; Weapons;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1976.4328559
