DocumentCode

824956

Title

Application of Damage Constants in Gamma Irradiated Anphoterically Si Doped GaAs LEDs

Author

Barnes, C.E. ; Soda, K.J.

Author_Institution

Sandia Laboratories, Albuquerque, New Mexico 87115

Volume

23

Issue

6

fYear

1976

Firstpage

1664

Lastpage

1670

Keywords

Degradation; Doping; Electrons; Gallium arsenide; Laboratories; Light emitting diodes; Low voltage; Neutrons; Space charge; Weapons;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.1976.4328559

Filename

4328559