Title :
A generalized Scharfetter-Gummel method to eliminate crosswind effects [semiconduction device modeling]
Author :
He, Yie ; Cao, Guoxiang
Author_Institution :
Microelectron. Center, Southeast Univ., Nanjing, China
fDate :
12/1/1991 12:00:00 AM
Abstract :
A generalized Scharfetter-Gummel discretization method is proposed for semiconductor device modeling. Motivated by the classical Scharfetter-Gummel approach and the SUPG (streamline upwind/Petrov-Galerkin) method, an optimal nonlinear artificial diffusion term is added to the standard Galerkin finite element formula within a weighted residual form to construct the generalized Scharfetter-Gummel method, which exhibits better properties in precluding numerical oscillation and crosswind effects than the classical Scharfetter-Gummel method and the SUPG method. The generalized Scharfetter-Gummel method is more general and applicable to complicated problems
Keywords :
semiconductor device models; crosswind effects elimination; discretization method; generalized Scharfetter-Gummel method; optimal nonlinear artificial diffusion term; semiconductor device modeling; standard Galerkin finite element formula; weighted residual form; Aerodynamics; Electron mobility; Finite element methods; Fluid dynamics; Helium; Microelectronics; Moment methods; Nonlinear equations; Semiconductor device modeling; Stability;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on