Title :
Technique for Selection of Transient Radiation-Hard Junction-Isolated Integrated Circuits
Author :
Crowley, J.L. ; Junga, F.A. ; Stultz, T.J.
Author_Institution :
Lockheed Palo Alto Research Laboratory Lockheed Missiles and Space Company, Inc. Palo Alto, California 94304
Abstract :
A technique is presented which demonstrates the feasibility of selecting junction-isolated integrated circuits (JI/ICS) for use in transient radiation environments. The procedure guarantees that all PNPN paths within the integrated circuit are identified and describes the methods used to determine whether the paths represent latchup susceptible structures. Two examples of the latchup analysis are given involving an SSI and an LSI bipolar junction-isolated integrated circuit.
Keywords :
Charge carrier processes; Circuit testing; Integrated circuit reliability; Ionizing radiation; Laboratories; Large scale integration; Low voltage; Mathematics; Missiles; Thyristors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1976.4328565
