Title :
Flip-chip bonded InAsSbP and InGaAs LEDs and detectors for the 3-μm spectral region
Author :
Matveev, B.A. ; Aydaraliev, M. ; Zotova, N.V. ; Karandashov, S.A. ; Il´inskaya, N.D. ; Remennyi, M.A. ; Stus´, N.M. ; Talalakin, G.N.
Author_Institution :
Ioffe Physico-Tech. Inst., Russian Acad. of Sci., St. Petersburg, Russia
Abstract :
Light-emitting diodes operating in the 2.8-2.9 μm spectral region have been fabricated from InGaAs and InAsSbP p-n structures grown onto n- and heavily doped n+-InAs substrates. Owing to the high transparency of the n+-InAs and n-InGaAs buffer, the episide-down construction was successfully implemented for LEDs and photodiodes, and room temperature operation with output power and detectivity as high as 400 μW (I = 1A) and 1.5 × 1010cm Hz12//W was correspondingly achieved. Operation of the LEDs and optically coupled LED-photodiode pairs was demonstrated in the 15-190°C temperature range.
Keywords :
III-V semiconductors; flip-chip devices; gallium arsenide; indium compounds; infrared detectors; light emitting diodes; optical fabrication; photodiodes; transparency; 1 A; 15 to 190 degC; 2.8 to 2.9 mum; 3 mum; 400 muW; InAs; InAsSbP; InAsSbP LED; InGaAs; InGaAs LED; episide-down construction; flip-chip bonded LED; flip-chip bonded detectors; heavily doped n+-InAs substrates; light emitting diodes; n-InAs substrates; n-InGaAs buffer; n+-InAs buffer; optical fabrication; optically coupled LED-photodiode pairs; p-n structures; photodiodes; room temperature operation; transparency;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20030537
