Title :
Normal-incidence intersubband absorption in AlGaSb quantum wells: enhanced oscillator strength and new functionalities using asymmetry
Author :
Jancu, J.-M. ; Senellart, P. ; Peter, E. ; Berger, V. ; Chevrier, F. ; Joullié, A. ; Alibert, C. ; Krebs, O. ; Voisin, P.
Author_Institution :
Scuola Normale Superiore, Pisa, Italy
Abstract :
The properties of intersubband transitions in L-valley GaAlSb-AlSb quantum wells are reinvestigated using the extended-basis sp3 d5 s* tight binding model. New functionalities for mid-infrared photodetection, associated with normal incidence and the use of asymmetric quantum wells, are also discussed.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; infrared detectors; photodetectors; semiconductor quantum wells; tight-binding calculations; GaAlSb-AlSb; L-valley GaAlSb-AlSb quantum wells; asymmetric quantum wells; intersubband absorption; midinfrared photodetection; oscillator strength; tight binding model;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20030722
