Title :
Infrared dynamic scene simulating device based on light down-conversion
Author :
Malyutenko, V.K. ; Michailovskaya, K.V. ; Malyutenko, O.Yu. ; Bogatyrenko, V.V. ; Snyder, D.R.
Author_Institution :
Inst. of Semicond. Phys., Kiev, Ukraine
Abstract :
The pixelless dynamic scene projector successful in generating high-speed (microsecond range) broadband infrared (hωg, where ω is light frequency, h is Planck´s constant and Eg is the band gap value of the screen material) scenarios through shorter wavelength optical pumping hω>Eg of a semiconductor screen was developed, fabricated, and tested. The device operation principle is based on a possibility of dynamically modulating the apparent temperature (or power emitted in the spectral range of free carrier absorption-emission processes) of an image optically generated on a semiconductor screen (light down-conversion process). The device successfully monitors both hot and cold images (compared to a scene temperature) as well as erase-image and display-hidden-image processes. The results of an experimental study of a germanium screen (300 K < T < 500 K) in the 8-12 μm spectral range are reported for the first time.
Keywords :
elemental semiconductors; germanium; high-speed optical techniques; image sensors; infrared detectors; infrared imaging; optical frequency conversion; optical projectors; optical pumping; optical testing; 8 to 12 mum; cold image; germanium screen; hot image; infrared dynamic scene projector; light-down conversion; optical pumping;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20030846