Title :
X-ray study of interface stoichiometry and electronic properties of optically pumped antimonide-based mid-infrared W-laser structures
Author :
Hoffmann, G. ; Schwender, C. ; Vogelgesang, B. ; Schimper, H.J. ; Drumm, J.O. ; Herhammer, N. ; West, G.F. ; Fouckhardt, H. ; Scheib, M.
Author_Institution :
Integrated Optoelectron. & Microoptics Res. Group, Univ. of Kaiserslautern, Germany
Abstract :
The authors report on high-resolution X-ray diffraction studies of two antimonide-based mid-infrared W-laser samples. Both samples are of the same layer structure but with different mixed anion interface compositions in order to achieve lattice matching of the active region to the substrate in the second sample. A structural analysis, taking effects into account such as layer relaxation, layer tilting and asymmetrical strain enables an accurate determination of the average lattice constant of the active regions. The authors verify that the aim of lattice matching of the active region in the second sample is clearly achieved, and they also determine the strain values of the W-structure quantum-well layers and estimate the mixed anion interface stoichiometry. With a knowledge of the determined structural parameters, non-radiative recombination processes are investigated with time-resolved photoluminescence as well as laser properties under optically pumped laser operation.
Keywords :
III-V semiconductors; X-ray diffraction; infrared sources; interface states; interface structure; lattice constants; nonradiative transitions; optical pumping; photoluminescence; quantum well lasers; stoichiometry; time resolved spectra; W-laser structures; W-structure quantum-well layers; X-ray study; antimonide-based laser; asymmetrical strain; electron properties; high-resolution X-ray diffraction; interface stoichiometry; laser properties; lattice constant; lattice matching; layer relaxation; layer tilting; midinfrared laser; mixed anion interface compositions; nonradiative recombination; optically pumped laser; structural analysis; structural parameters; time-resolved photoluminescence;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20030484