Title :
Irradiate-Anneal Screening of Total Dose Effects in Semiconductor Devices
Author :
Stanley, Alan G. ; Price, William E.
Author_Institution :
Jet Propulsion Laboratory Pasadena, California
Keywords :
Annealing; Bipolar transistors; Circuits; Ionizing radiation; JFETs; Jupiter; Radiation detectors; Semiconductor devices; Temperature sensors; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1976.4328620
