Title :
Hybrid-integrated 4×4 optical gate matrix switch using silica-based optical waveguides and LD array chips
Author :
Yamada, Yasufumi ; Terui, Hiroshi ; Ohmori, Yasuji ; Yamada, Makoto ; Himeno, Akira ; Kobayashi, Morio
Author_Institution :
NTT Opto-electron. Lab., Ibaraki, Japan
fDate :
3/1/1992 12:00:00 AM
Abstract :
The fabrication and characteristics of a hybrid-integrated optical gate matrix switch were studied. The switch was composed of a silica-based single-mode guided-wave circuit and two InGaAsP gate array chips, each of which comprised eight laser diode optical gates. The gate array chips were assembled on the guided-wave circuit using a hybrid integration technique. The insertion loss of the fabricated 4×4 matrix switch was scattered among switching paths and ranged from 26 to 33 dB. The switch was applicable to a 400 Mb/s signal system with a bit error rate of 10-9. The numerical analysis shows that the residual reflectivity at the LD gate and waveguide facets caused the loss scattering among the paths and that reduction of the residual reflectivity is essential for improving the switch characteristics
Keywords :
gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical logic; optical losses; optical switches; optical waveguides; reflectivity; semiconductor laser arrays; 26 to 33 dB; 4×4 optical gate matrix switch; 400 Mbit/s; InGaAsP; LD array chips; LD optical logic gates; SiO2; bit error rate; hybrid-integrated; insertion loss; laser diode optical gates; loss scattering; residual reflectivity; semiconductors; signal system; silica-based optical waveguides; single-mode guided-wave circuit; switch characteristics; switching paths; waveguide facets; Assembly; Diode lasers; Optical arrays; Optical device fabrication; Optical scattering; Optical switches; Reflectivity; Semiconductor laser arrays; Switching circuits; Transmission line matrix methods;
Journal_Title :
Lightwave Technology, Journal of
