DocumentCode :
825885
Title :
Power loss and junction temperature analysis of power semiconductor devices
Author :
Xu, Dewei ; Lu, Haiwei ; Huang, Lipei ; Azuma, Satoshi ; Kimata, Masahiro ; Uchida, Ryohei
Author_Institution :
Dept. of Electr. & Comput. Eng., Ryerson Univ., Toronto, Ont., Canada
Volume :
38
Issue :
5
fYear :
2002
Firstpage :
1426
Lastpage :
1431
Abstract :
A newly developed electrothermal calculation method is implemented to estimate the power loss and working temperature of insulated gate bipolar transistor (IGBT) devices. Based on the measurement of the IGBT´s characteristics, the exact estimation of power loss considering the junction temperature is introduced. Then, the thermal network is used to calculate the working temperature. The comparison between experimental and calculation results shows that this method is effective as a designing step with only the time-domain voltage and current data obtained from simulation results.
Keywords :
insulated gate bipolar transistors; losses; p-n junctions; power bipolar transistors; power field effect transistors; thermal analysis; IGBT; electrothermal calculation method; insulated gate bipolar transistor; junction temperature; power loss; power loss estimation; power semiconductor devices; thermal network; time-domain current data; time-domain voltage data; working temperature calculation; Circuit simulation; Industry Applications Society; Insulated gate bipolar transistors; Power semiconductor devices; Power semiconductor switches; Pulse width modulation; Space vector pulse width modulation; Temperature; Time domain analysis; Voltage;
fLanguage :
English
Journal_Title :
Industry Applications, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-9994
Type :
jour
DOI :
10.1109/TIA.2002.802995
Filename :
1035197
Link To Document :
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