Power loss and junction temperature analysis of power semiconductor devices

Author

Xu, Dewei ; Lu, Haiwei ; Huang, Lipei ; Azuma, Satoshi ; Kimata, Masahiro ; Uchida, Ryohei

Author_Institution

Dept. of Electr. & Comput. Eng., Ryerson Univ., Toronto, Ont., Canada

Volume

38

Issue

5

fYear

2002

Firstpage

1426

Lastpage

1431

Abstract

A newly developed electrothermal calculation method is implemented to estimate the power loss and working temperature of insulated gate bipolar transistor (IGBT) devices. Based on the measurement of the IGBT´s characteristics, the exact estimation of power loss considering the junction temperature is introduced. Then, the thermal network is used to calculate the working temperature. The comparison between experimental and calculation results shows that this method is effective as a designing step with only the time-domain voltage and current data obtained from simulation results.

Keywords

insulated gate bipolar transistors; losses; p-n junctions; power bipolar transistors; power field effect transistors; thermal analysis; IGBT; electrothermal calculation method; insulated gate bipolar transistor; junction temperature; power loss; power loss estimation; power semiconductor devices; thermal network; time-domain current data; time-domain voltage data; working temperature calculation; Circuit simulation; Industry Applications Society; Insulated gate bipolar transistors; Power semiconductor devices; Power semiconductor switches; Pulse width modulation; Space vector pulse width modulation; Temperature; Time domain analysis; Voltage;

fLanguage

English

Journal_Title

Industry Applications, IEEE Transactions on

Publisher

ieee

ISSN

0093-9994

Type

jour

DOI

10.1109/TIA.2002.802995

Filename

1035197