Title :
Power loss and junction temperature analysis of power semiconductor devices
Author :
Xu, Dewei ; Lu, Haiwei ; Huang, Lipei ; Azuma, Satoshi ; Kimata, Masahiro ; Uchida, Ryohei
Author_Institution :
Dept. of Electr. & Comput. Eng., Ryerson Univ., Toronto, Ont., Canada
Abstract :
A newly developed electrothermal calculation method is implemented to estimate the power loss and working temperature of insulated gate bipolar transistor (IGBT) devices. Based on the measurement of the IGBT´s characteristics, the exact estimation of power loss considering the junction temperature is introduced. Then, the thermal network is used to calculate the working temperature. The comparison between experimental and calculation results shows that this method is effective as a designing step with only the time-domain voltage and current data obtained from simulation results.
Keywords :
insulated gate bipolar transistors; losses; p-n junctions; power bipolar transistors; power field effect transistors; thermal analysis; IGBT; electrothermal calculation method; insulated gate bipolar transistor; junction temperature; power loss; power loss estimation; power semiconductor devices; thermal network; time-domain current data; time-domain voltage data; working temperature calculation; Circuit simulation; Industry Applications Society; Insulated gate bipolar transistors; Power semiconductor devices; Power semiconductor switches; Pulse width modulation; Space vector pulse width modulation; Temperature; Time domain analysis; Voltage;
Journal_Title :
Industry Applications, IEEE Transactions on
DOI :
10.1109/TIA.2002.802995
