Title :
An All Epitaxial Silicon Diode Heavy Ion Detector
Author :
Gruhn, C.R. ; Goldstone, P.D. ; Jarmie, Nelson
Abstract :
An all epitaxial silicon diode (ESD) heavy ion detector has been designed, fabricated, and tested. The active area of the detector is 5 cm2 and has a total thickness of 50 ¿. The response of the detector has been studied with fission fragments, alpha particles, oxygen ions, and sulfur ions. A number of advantages in terms of both fabrication and performance are discussed.
Keywords :
Detectors; Diodes; Electrostatic discharge; Epitaxial layers; Fabrication; Pulse amplifiers; Pulse measurements; Silicon; Substrates; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1977.4328657
