Last Metal Copper Metallization for Power Devices

Author

Robl, Werner ; Melzl, Michael ; Weidgans, Berngard ; Hofmann, Renate ; Stecher, Matthias

Author_Institution

Infineon Technol. AG, Regensburg

Volume

21

Issue

3

fYear

2008

Firstpage

358

Lastpage

362

Abstract

High current-carrying capacity and low resistivity are key parameters for power devices. In this paper a copper based terminal metallurgy scheme for wire- and wedge-bonding is described, which improves these properties. The method of choice for depositing thick copper wires is pattern plating. However the plating process has to be optimized in order to get a homogeneous thickness distribution. An electroless coating of NiP, Pd and Au on top of the Cu layers is used as bond interface. This process provides high reliable gold-wire and aluminum-wedge bonds.

Keywords

electroplating; metallisation; aluminum-wedge bonds; bond interface; electroless coating; high current-carrying capacity; homogeneous thickness distribution; metal copper metallization; pattern plating; power devices; reliable gold-wire bonds; terminal metallurgy scheme; wedge-bonding; wire-bonding; Aluminum; Bonding; Conducting materials; Conductivity; Copper; Gold; Metallization; Passivation; Resists; Wiring; Copper; electroless plating; electroplating; texture;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/TSM.2008.2001210

Filename

4589046