Resolution Power of Semiconductor Detectors Using Impact Ionization

The possibility of an impact ionization is analyzed to use for signal amplification in radiation detectors. The main attention is given to a resolution power of detectors. As compare with gas proportional detectors, there are two additional sources of fluctuations. The first is the nonmonopolar character of ionization due to holes participation. The second is the electric field distribution nonuniformity causing by impurity concentration relief. The fluctuation values have been calculated and it has been determined the energy region in which the use of impact ionization is reasonable at solving the spectroscopy problems.