An Improved Superjunction Structure With Variation Vertical Doping Profile

Author

Zhi Lin ; Haimeng Huang ; Xingbi Chen

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

Volume

62

Issue

1

fYear

2015

fDate

Jan. 2015

Firstpage

228

Lastpage

231

Abstract

An analysis of an improved superjunction structure with variation vertical doping profile (VVD-SJ) is presented in this brief. It features a better tradeoff between breakdown voltage (BV) and specific ON-resistance (R_on) than the prior art, due to a higher average doping concentration in columns. A simple 2-D electric field model of the VVD-SJ structure is derived based on charge superposition principle. Optimized results show that the specific ON-resistance of the VVD-SJ structure is reduced by ~10%, compared with the SJ one under the same BV and aspect ratio. The mainstream multiple epitaxial growth and implantation technology is suitable to fabricate the VVD-SJ power MOSFET without extra process cost.

Keywords

doping profiles; electric breakdown; power MOSFET; semiconductor device models; semiconductor junctions; 2D electric field model; VVD-SJ power MOSFET; breakdown voltage; charge superposition principle; doping concentration; implantation technology; improved superjunction structure; mainstream multiple epitaxial growth; specific ON-resistance; variation vertical doping profile; Doping; Educational institutions; Electric breakdown; Epitaxial growth; MOSFET; Semiconductor process modeling; Silicon; Breakdown voltage (BV); electric field model; specific ON-resistance; variation vertical doping superjunction (VVD-SJ); variation vertical doping superjunction (VVD-SJ).;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2372819

Filename

6979225