Title :
AlGaInP-sapphire glue bonded light-emitting diodes
Author :
Chang, Shoou-Jinn ; Su, Yan-Kuin ; Yang, Timothy ; Chang, Chih-Sung ; Chen, Tzer-Peng ; Huang, Kuo-Hsin
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
10/1/2002 12:00:00 AM
Abstract :
A novel method was proposed to glue an AlGaInP-GaAs light-emitting diode (LED) onto a transparent sapphire substrate. The absorbing GaAs was subsequently removed by selective wet etching. It was found that the emission efficiency could reach 401 m/W under 20-mA current injection for the 622-nm glue bonded (GB) AlGaInP-sapphire LED. It was also found that these GB LEDs are highly reliable, with small variations in operation voltage and luminescence intensity during the life test.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; quantum well devices; wafer bonding; 20 mA; 622 nm; Al2O3; AlGaInP-GaAs; MOCVD; MQW; current-voltage measurements; electrical properties; emission efficiency; glue bonding; life test; light-emitting diode; luminescence intensity; optical properties; selective wet etching; spin-on-glass method; transparent sapphire substrate; Distributed Bragg reflectors; Gallium arsenide; Light emitting diodes; MOCVD; Photonic band gap; Quantum well devices; Substrates; Voltage; Wafer bonding; Wet etching;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2002.802970
