DocumentCode :
827360
Title :
Whatever Happened to Silicon Carbide
Author :
Campbell, Robert B.
Author_Institution :
Westinghouse Electric Corporation, Pittsburgh, PA 15236.
Issue :
2
fYear :
1982
fDate :
5/1/1982 12:00:00 AM
Firstpage :
124
Lastpage :
128
Abstract :
Silicon carbide has been used extensively as an abrasive, but only in the last 25 years has its potential as a semiconductor been exploited. The rationale for SiC semiconductor devices is their high temperature performance. Rectifiers, field effect transistors, charged particle detectors, and other devices operate efficiently at temperatures about 800 K.
Keywords :
Abrasives; Chemicals; Crystals; Etching; Fabrication; Laboratories; Lattices; Rectifiers; Silicon carbide; Temperature;
fLanguage :
English
Journal_Title :
Industrial Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0046
Type :
jour
DOI :
10.1109/TIE.1982.356648
Filename :
4180377
Link To Document :
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