Title :
Fabrication and High-Temperature Characteristics of Ion-Implanted GaAs Bipolar Transistors and Ring-Oscillators
Author :
Doerbeck, Friedrich H. ; Duncan, Walter M. ; Mclevige, William V. ; Yuan, Han-tzong
Author_Institution :
Texas Instruments Incorporated, P. O. Box 225936, Dallas, TX 75265.
fDate :
5/1/1982 12:00:00 AM
Abstract :
GaAs bipolar transistors and ring-oscillators were fabricated by ion implantation into VPE structures. The transistor and circuit performance was tested between 25°C and 400°C. Leakage currents determine the useful temperature range. Present GaAs circuits fail at approximately 390°C due to the metallization technology.
Keywords :
Bipolar transistors; Circuit testing; Electron mobility; Fabrication; Gallium arsenide; Ion implantation; Leakage current; Photonic band gap; Semiconductor materials; Temperature;
Journal_Title :
Industrial Electronics, IEEE Transactions on
DOI :
10.1109/TIE.1982.356650
